1st Pulsed CV measurement

It's the first pulsed Capacitance-Voltage measurement on high-k materials. There were some problems. Segmentations of voltage curve were not shown correctly, and data cannot be saved into pan driver.

A pulsed CV measurement of silicon oxide MOS capacitor has been taken. The LabView programming environment is used to control instrumentation which allows rapid measurement of flat band voltage shifts in MOS capacitors incorporating high-k materials.

Pulsed CV measurement uses a programmable voltage source, capacitor and load resistor to form the circuit to plot capacitance voltage curve. The circuit is shown below:

Pulsed CV circuit

The input voltage V_i is a ramp voltage, the component under test (CUT) is shown in the dotted square, the output voltage V_o is measured across a very small load resistor. Calculation principle used in pulsed CV measurement is: