It's the first pulsed Capacitance-Voltage measurement on high-k materials. There were some problems. Segmentations of voltage curve were not shown correctly, and data cannot be saved into pan driver.
A
pulsed CV measurement of silicon oxide MOS capacitor has been taken. The LabView programming environment is used to
control instrumentation which allows rapid measurement of flat band voltage
shifts in MOS capacitors incorporating high-k materials.
Pulsed CV measurement uses a programmable voltage source, capacitor
and load resistor to form the circuit to plot capacitance voltage curve. The
circuit is shown below:
 |
| Pulsed CV circuit |
The input voltage Vi is a ramp voltage, the component
under test (CUT) is shown in the dotted square, the output voltage Vo
is measured across a very small load resistor. Calculation principle used in pulsed CV measurement is: